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this is information on a product in full production. august 2014 docid026826 rev 1 1/20 20 stgfw20h65fb, STGW20H65FB, stgwt20h65fb trench gate field-stop igbt, hb series 650 v, 20 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 1.55 v (typ.) @ i c = 20 a ? tight parameters distribution ? safe paralleling ? low thermal resistance ? lead free package applications ? photovoltaic inverters ? high frequency converters description these devices are igbts developed using an advanced proprietary trench gate and field-stop structure. the device is part of the new hb series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. to-247 1 2 3 to-3p 1 2 3 tab 1 1 1 1 2 3 to-3pf c (2, tab) e (3) g (1) table 1. device summary order codes marking package packaging stgfw20h65fb gfw20h65fb to-3pf tube STGW20H65FB gw20h65fb to-247 tube stgwt20h65fb gwt20h65fb to-3p tube www.st.com
contents stgfw20h65fb, STGW20H65FB, stgwt20h65fb 2/20 docid026826 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.1 to-3pf, stgfw20h65fb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 to-247, STGW20H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 to-3p, stgwt20h65fb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
docid026826 rev 1 3/20 stgfw20h65fb, STGW20H65FB, stgwt20h65fb electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-247 to-3p to-3pfp v ces collector-emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 40 a i c continuous collector current at t c = 100 c 20 a i cp (1) 1. pulse width limited by ma ximum junction temperature. pulsed collector current 80 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 168 52 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit to-3pf to-247 to-3p r thjc thermal resistance junction-case 2.9 0.9 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics stgfw20h65fb, STGW20H65FB, stgwt20h65fb 4/20 docid026826 rev 1 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 650 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 20 a 1.55 2 v v ge = 15 v, i c = 20 a t j = 125 c 1.65 v ge = 15 v, i c = 20 a t j = 175 c 1.75 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 650 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -2764- pf c oes output capacitance - 80 - pf c res reverse transfer capacitance -60-pf q g total gate charge v cc = 520 v, i c = 20 a, v ge = 15 v, see figure 27 -120-nc q ge gate-emitter charge - 20 - nc q gc gate-collector charge - 50 - nc
docid026826 rev 1 5/20 stgfw20h65fb, STGW20H65FB, stgwt20h65fb electrical characteristics table 6. switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v, see figure 26 -30-ns t r current rise time - 11 - ns (di/dt) on turn-on current slope - 1400 - a/s t d(off) turn-off delay time 139 - ns t f current fall time - 20 - ns e on (1) 1. energy losses include reverse recovery of the external diode. turn-on times and energy have been measured applying as freewheeling an external sic diode stpsc206w turn-on switching losses - 77 - j e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 170 - j e ts total switching losses - 247 - j t d(on) turn-on delay time v ce = 400 v, i c = 20 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 26 -29-ns t r current rise time - 12 - ns (di/dt) on turn-on current slope - 1352 - a/s t d(off) turn-off delay time - 147 - ns t f current fall time - 38 - ns e on (1) turn-on switching losses - 88 - j e off (2) turn-off switching losses - 353 - j e ts total switching losses - 441 - j
electrical characteristics stgfw20h65fb, STGW20H65FB, stgwt20h65fb 6/20 docid026826 rev 1 2.1 electrical characteristics (curve) figure 2. output characteristics (t j = 25c) figure 3. output characteristics (t j = 175c) i c 30 20 10 0 0 2 v ce (v) 4 (a) 13 40 50 11v v ge =15 v 9v 13v 7v 60 70 gipg260820141108fsr i c 30 20 10 0 0 2 v ce (v) 4 (a) 13 40 50 11v v ge =15 v 9v 13v 7v 60 80 gipg260820141120fsr figure 4. transfer characteristics figure 5. collector current vs. case temperature for to-247 and to-3p figure 6. collector current vs. case temperature for to-3pf figure 7. v ce(sat) vs. junction temperature i c 60 40 20 10 7 9 v ge (v) (a) 810 70 30 v ce =10 v 25 c 175 c 50 gipg260820141127fsr i c 30 20 10 0 0 50 t c (c) 75 (a) 25 100 125 150 v ge 15v, t j 175 c 40 gipg260820141136fsr i c 20 15 10 0 0 50 t c (c) 75 (a) 25 100 125 150 v ge 15v, t j 175 c 25 5 gipg260820141147fsr v ce(sat) 1.8 1.6 1.4 1.2 -50 0 t j (c) (v) 50 100 150 2.2 2.0 v ge = 15v i c = 40a i c = 20a i c = 10a gipg260820141153fsr
docid026826 rev 1 7/20 stgfw20h65fb, STGW20H65FB, stgwt20h65fb electrical characteristics figure 8. power dissipation vs. case temperature for to-247 and to-3p figure 9. power dissipation vs. case temperature for to-3pf p tot 60 40 0 0 50 t c (c) 75 (w) 25 100 125 150 20 80 175 100 v ge 15v, t j 175 c 120 140 160 gipg280120141359fsr p tot 20 0 0 50 t c (c) 75 (w) 25 100 125 150 10 175 30 v ge 15v, t j 175 c 40 50 gipg260820141204fsr figure 10. forward bias safe operating area for to-247 and to-3p figure 11. forward bias safe operating area for to-3pf i c 10 1 0.1 1 v ce (v) (a) 10 100 10 s 100 s 1 ms (single pulse t c = 25c, t j 175c; v ge =15v) gipg260820141333fsr i c 10 1 0.1 1 v ce (v) (a) 10 100 10 s 100 s 1 ms (single pulse t c = 25c, t j 175c; v ge =15v) gipg260820141339fsr figure 12. collector current vs. switching frequency for to-247 and to-3p figure 13. collector current vs. switching frequency for to-3pf 0 10 20 30 40 110 ic [a] f [khz] g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =4.7 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c 50 60 gipg260820141342fsr 0 5 10 15 110 ic [a] f [khz] g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =4.7 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c 20 gipg260820141347fsr
electrical characteristics stgfw20h65fb, STGW20H65FB, stgwt20h65fb 8/20 docid026826 rev 1 figure 14. normalized v ge(th) vs. junction temperature figure 15. normalized v (br)ces vs. junction temperature v ge(th) (norm) 0.8 0.7 0.6 -50 t j (c) 0 50 100 150 0.9 1.0 v ce = v ge i c = 1ma am16060v1 v (br)ces (norm) 1.1 1.0 0.9 -50 t j (c) 0 50 100 150 i c = 1ma am16059v1 figure 16. switching losses vs temperature figure 17. switching losses vs gate resistance e (j) 250 150 50 20 t j (c) 40 60 80 100 350 v cc = 400v, v ge = 15v r g = 10, i c = 20a 120 e on e off 140 160 gipg260820141404fsr e (j) 250 50 3 r g () 10 17 24 350 v cc = 400v, v ge = 15v i c = 20a, t j = 175 c 31 e on e off 38 45 150 450 550 gipg260820141408fsr figure 18. switching losses vs collector curren t figure 19. switching losses vs collector emitter voltage e (j) 400 200 0 0 i c (a) 10 20 30 40 600 v cc = 400v, v ge = 15v r g = 10, t j = 175c) e on e off gipg260820141358fsr e (j) 200 100 0 150 v ce (v) 250 350 450 300 t j = 175c, v ge = 15v r g = 10, i c = 20a e on e off 400 gipg260820141413fsr
docid026826 rev 1 9/20 stgfw20h65fb, STGW20H65FB, stgwt20h65fb electrical characteristics figure 20. switching times vs collector current figure 21. switching times vs gate resistance t(ns) 100 10 1 0 i c (a) 20 30 40 t j = 175c, v ge = 15v r g = 10, v cc = 400v t f t doff t don t r 10 gipg260820141417fsr t(ns) 100 10 0 r g () 10 20 t j = 175c, v ge = 15v i c = 20a, v cc = 400v t f t doff 30 t don t r 40 10 gipg260820141422fsr figure 22. capacitance variations figure 23. gate charge vs. gate-emitter voltage c(pf) 1000 100 10 0.1 v ce (v) 110 10000 c ies c oes c res gipg260820141434fsr v ge (v) 4 2 0 0 q g (nc) 40 80 120 6 8 10 12 14 v cc = 520v, i c = 20a i g = 1ma 16 gipg260820141445fsr
electrical characteristics stgfw20h65fb, STGW20H65FB, stgwt20h65fb 10/20 docid026826 rev 1 figure 24. thermal impedance for to-247 and to-3p 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 zthto2t_b
docid026826 rev 1 11/20 stgfw20h65fb, STGW20H65FB, stgwt20h65fb electrical characteristics figure 25. thermal impedance for to-3pf 10 -5 10 -4 10 -3 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/t tp t single pulse =0.5 10 -2 10 -1 10 0 zthtof3t_a
test circuits stgfw20h65fb, STGW20H65FB, stgwt20h65fb 12/20 docid026826 rev 1 3 test circuits figure 26. test circuit for inductive load switching figure 27. gate charge test circuit figure 28. switching waveform am01504v1 am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10%
docid026826 rev 1 13/20 stgfw20h65fb, STGW20H65FB, stgwt20h65fb package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. 4.1 to-3pf, stgfw20h65fb figure 29. to-3pf drawing 7627132_d
package mechanical data stgfw20h65fb, STGW20H65FB, stgwt20h65fb 14/20 docid026826 rev 1 table 7. to-3pf mechanical data dim. mm min. typ. max. a5.30 5.70 c2.80 3.20 d3.10 3.50 d1 1.80 2.20 e0.80 1.10 f0.65 0.95 f2 1.80 2.20 g10.30 11.50 g1 5.45 h 15.30 15.70 l 9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n1.80 2.20 r3.80 4.20 dia 3.40 3.80
docid026826 rev 1 15/20 stgfw20h65fb, STGW20H65FB, stgwt20h65fb package mechanical data 4.2 to-247, STGW20H65FB figure 30. to-247 drawing 0075325_g
package mechanical data stgfw20h65fb, STGW20H65FB, stgwt20h65fb 16/20 docid026826 rev 1 table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid026826 rev 1 17/20 stgfw20h65fb, STGW20H65FB, stgwt20h65fb package mechanical data 4.3 to-3p, stgwt20h65fb figure 31. to-3p drawing 8045950_b
package mechanical data stgfw20h65fb, STGW20H65FB, stgwt20h65fb 18/20 docid026826 rev 1 table 9. to-3p mechanical data dim. mm min. typ. max. a 4.60 4.80 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.70 13.90 14.10 e 15.40 15.60 15.80 e1 13.40 13.60 13.80 e2 9.40 9.60 9.90 e 5.15 5.45 5.75 l 19.80 20 20.20 l1 3.30 3.50 3.70 l2 18.20 18.40 18.60 ?p 3.30 3.40 3.50 ?p1 3.10 3.20 3.30 q 4.80 5 5.20 q1 3.60 3.80 4
docid026826 rev 1 19/20 stgfw20h65fb, STGW20H65FB, stgwt20h65fb revision history 5 revision history table 10. document revision history date revision changes 28-aug-2014 1 initial release.
stgfw20h65fb, STGW20H65FB, stgwt20h65fb 20/20 docid026826 rev 1 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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